发明名称 |
NON-VOLATILE SEMICONDUCTOR STORAGE DEVICE AND METHOD OF MANUFACTURING THE SAME |
摘要 |
<p>A non-volatile semiconductor storage device has a plurality of memory strings with a plurality of electrically rewritable memory cells connected in series. Each of the memory strings includes: a first columnar semiconductor layer extending in a direction perpendicular to a substrate; a charge accumulation layer formed on the first columnar semiconductor layer via a first air gap and accumulating charges; a block insulation layer contacting the charge accumulation layer; and a plurality of first conductive layers contacting the block insulation layer.</p> |
申请公布号 |
KR20090043463(A) |
申请公布日期 |
2009.05.06 |
申请号 |
KR20080106103 |
申请日期 |
2008.10.28 |
申请人 |
KABUSHIKI KAISHA TOSHIBA |
发明人 |
KITO MASARU;KATSUMATA RYOTA;KIDOH MASARU;TANAKA HIROYASU;FUKUZUMI YOSHIAKI;AOCHI HIDEAKI;MATSUOKA YASUYUKI |
分类号 |
H01L27/115;H01L21/8247 |
主分类号 |
H01L27/115 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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