| 摘要 |
An n-Type semiconductor carbon nanomaterial is produced by mixing a substance having a functional group such as an amino or alkyl group with an inert gas and reacting a semiconductor carbon nanomaterial (1a) with the mixture under irradiation with VUV to covalently bond the amino or alkyl group to the carbon nanomaterial (1a). The amino or alkyl group covalently bonded to the semiconductor carbon nanomaterial (1a) serves as electron-donating groups to convert the carbon nanomaterial (1a) into an n-type one. According to the invention, since the electron-donating group is covalently bonded, a stable n-type semiconductor carbon nanomaterial (1) is obtained which little changes into a p-type one. Further, since the n-type semiconductor carbon nanomaterial (1) is produced by a dry process, bundling or inclusion of impurities can be suppressed. Therefore, the uniform n-type semiconductor carbon nanomaterial (1) having high reliability and stability can be produced.
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