发明名称 |
PROCESS FOR PRODUCING WAFER OF SILICON CARBIDE SINGLE-CRYSTAL |
摘要 |
A process for manufacturing a wafer of a silicon carbide single crystal having: cutting a wafer from an ± (hexagonal) -silicon carbide single crystal so that the off-angle is totally in the range from 0.4 to 2° to a plane obtained in perpendicular to the [0001] c axis of the silicon carbide single crystal; disposing the wafer in a reaction vessel; feeding a silicon source gas and carbon source gas in the reaction vessel; and epitaxially growing the ± (hexagonal) silicon carbide single crystal on the wafer by allowing the silicon source gas and carbon source gas to react. |
申请公布号 |
EP1752567(A4) |
申请公布日期 |
2009.05.06 |
申请号 |
EP20050743804 |
申请日期 |
2005.05.25 |
申请人 |
BRIDGESTONE CORPORATION |
发明人 |
MARUYAMA, TAKAYUKI;CHIBA, TOSHIMI |
分类号 |
C30B29/36;C23C16/42;C30B25/02;C30B25/18;H01L21/20;H01L21/205 |
主分类号 |
C30B29/36 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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