Semiconductor silicon single crystal growth method having improvement in oxygen concentration characteristics

摘要

The present invention relates to a semiconductor single crystal growth method, which uses a Czochralski process for growing a semiconductor single crystal (1) through a solid-liquid interface by dipping a seed into a semiconductor melt received in a quartz crucible (10) and pulling up the seed while rotating the quartz crucible (10) and applying a strong horizontal magnetic field, wherein the seed is pulled up while the quartz crucible (10) is rotated with a rate between 0.6 rpm and 1.5 rpm.