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发明名称
P-TYPE NITRIDE SEMICONDUCTOR STRUCTURE AND BIPOLAR TRANSISTOR
摘要
申请公布号
EP1583154(A4)
申请公布日期
2009.05.06
申请号
EP20040700296
申请日期
2004.01.06
申请人
NIPPON TELEGRAPH AND TELEPHONE CORPORATION
发明人
MAKIMOTO, TOSHIKI;KUMAKURA, KAZUHIDE;KOBAYASHI, NAOKI
分类号
H01L21/285;H01L21/331;H01L29/20;H01L29/737;(IPC1-7):H01L29/737;H01L21/28
主分类号
H01L21/285
代理机构
代理人
主权项
地址
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