| 摘要 |
<p>A method for manufacturing a semiconductor device comprises: forming a first photoresist pattern in a double patterning technology (DPT) for overcoming a resolution limit of an exposer; and forming a second photoresist pattern. The method further comprises forming a hard mask film and an anti-reflective film to prevent an intermixing phenomenon generated when the second photoresist pattern is formed. As a result, yield and reliability of the process can be improved.</p> |
