METHOD FOR FORMING DUAL GATE OF SEMICONDUCTOR DEVICE,申请号KR20070109127-传众专利搜索

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发明名称	METHOD FOR FORMING DUAL GATE OF SEMICONDUCTOR DEVICE
摘要
申请公布号	KR20090043332(A)	申请公布日期	2009.05.06
申请号	KR20070109127	申请日期	2007.10.29
申请人	HYNIX SEMICONDUCTOR INC.	发明人	JIN, SEUNG WOO
分类号	H01L21/336;H01L21/324;H01L29/78	主分类号	H01L21/336
代理机构		代理人
主权项
地址

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