| 发明名称 |
Structure and method for manufacturing device with ultra thin SOI at the tip of a V-shape channel |
| 摘要 |
An SOI CMOS structure includes a v-shape trench in a pFet region. The v-shape trench has a surface in a (111) plane and extends into an SOI layer in the pFet region. A layer, such as a gate oxide or high-k material, is formed in the v-shape trench. Poly-Si is deposited on top of the layer.
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| 申请公布号 |
US7528027(B1) |
申请公布日期 |
2009.05.05 |
| 申请号 |
US20080054727 |
申请日期 |
2008.03.25 |
| 申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
ZHU HUILONG;KUMAR MAHENDER;MOCUTA DAN M.;RAMACHANDRAN RAVIKUMAR;ZHU WENJUAN |
| 分类号 |
H01L21/336 |
主分类号 |
H01L21/336 |
| 代理机构 |
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