发明名称 Ferroelectric capacitor and semiconductor device
摘要 A ferroelectric capacitor includes: a base substrate; a first electrode provided above the base substrate; a ferroelectric layer provided above the first electrode; a conductive film provided on the ferroelectric layer; a sacrificial layer composed of dielectric material provided above the conductive film; and a second electrode provided above the sacrificial layer.
申请公布号 US7528429(B2) 申请公布日期 2009.05.05
申请号 US20060612885 申请日期 2006.12.19
申请人 SEIKO EPSON CORPORATION 发明人 FUKADA SHINICHI
分类号 H01L27/108 主分类号 H01L27/108
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