发明名称 Interconnect structure and method of fabrication of same
摘要 A damascene wire and method of forming the wire. The method including: forming a mask layer on a top surface of a dielectric layer; forming an opening in the mask layer; forming a trench in the dielectric layer where the dielectric layer is not protected by the mask layer; recessing the sidewalls of the trench under the mask layer; forming a conformal conductive liner on all exposed surface of the trench and the mask layer; filling the trench with a core electrical conductor; removing portions of the conductive liner extending above the top surface of the dielectric layer and removing the mask layer; and forming a conductive cap on a top surface of the core conductor. The structure includes a core conductor clad in a conductive liner and a conductive capping layer in contact with the top surface of the core conductor that is not covered by the conductive liner.
申请公布号 US7528493(B2) 申请公布日期 2009.05.05
申请号 US20070860590 申请日期 2007.09.25
申请人 INTERNATIONAL BUSINESS MACHINES CORPORATION 发明人 YANG CHIH-CHAO;CLEVENGER LAWRENCE A.;COWLEY ANDREW P.;DALTON TIMOTHY J.;YOON MEEYOUNG H.
分类号 H01L29/06;H01L21/4763 主分类号 H01L29/06
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