发明名称 |
Interconnect structure and method of fabrication of same |
摘要 |
A damascene wire and method of forming the wire. The method including: forming a mask layer on a top surface of a dielectric layer; forming an opening in the mask layer; forming a trench in the dielectric layer where the dielectric layer is not protected by the mask layer; recessing the sidewalls of the trench under the mask layer; forming a conformal conductive liner on all exposed surface of the trench and the mask layer; filling the trench with a core electrical conductor; removing portions of the conductive liner extending above the top surface of the dielectric layer and removing the mask layer; and forming a conductive cap on a top surface of the core conductor. The structure includes a core conductor clad in a conductive liner and a conductive capping layer in contact with the top surface of the core conductor that is not covered by the conductive liner.
|
申请公布号 |
US7528493(B2) |
申请公布日期 |
2009.05.05 |
申请号 |
US20070860590 |
申请日期 |
2007.09.25 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
YANG CHIH-CHAO;CLEVENGER LAWRENCE A.;COWLEY ANDREW P.;DALTON TIMOTHY J.;YOON MEEYOUNG H. |
分类号 |
H01L29/06;H01L21/4763 |
主分类号 |
H01L29/06 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|