Semiconductor device comprising at least one MOS transistor having an etch stop layer, and corresponding fabrication process

摘要

A semiconductor device includes at least one MOS transistor, each transistor being provided with a source region and a drain region formed in a semiconductor substrate, along with a gate region and spacers. The transistor is covered with a unitary etch stop layer that includes at least a first zone having a first residual stress level (in tension) covering at least one part of the transistor and at least a second zone having a second residual stress level (in compression) covering at least another part of the device. With this configuration, the first residual stress level is higher than the second residual stress level.