发明名称 |
Stressor integration and method thereof |
摘要 |
A method is provided for making a semiconductor device. In accordance with the method, a substrate (203) is provided which has first (205) and second (207) gate structures thereon. A first stressor layer (215) is formed over the substrate, and a sacrificial layer (216) is formed over the first stressor layer. A second stressor layer (219) is formed over the sacrificial layer.
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申请公布号 |
US7528029(B2) |
申请公布日期 |
2009.05.05 |
申请号 |
US20060408347 |
申请日期 |
2006.04.21 |
申请人 |
FREESCALE SEMICONDUCTOR, INC. |
发明人 |
GRUDOWSKI PAUL A.;GOEDEKC DARREN V.;HACKENBERG JOHN J. |
分类号 |
H01L21/8238 |
主分类号 |
H01L21/8238 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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