发明名称 |
Bipolar power transistor and related integrated device with clamp means of the collector voltage |
摘要 |
A bipolar power transistor does not include integration of a Zener diode electrically connected between the base and collector for limiting the collector voltage. The power transistor is formed in a substrate, and includes an equalization diffusion and an auxiliary diffusion forming a P-N junction along a perimeter of the substrate. An equalization conduction layer is in contact with the equalization diffusion and the auxiliary diffusion for electrically shorting the P-N junction.
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申请公布号 |
US7528461(B2) |
申请公布日期 |
2009.05.05 |
申请号 |
US20060423335 |
申请日期 |
2006.06.09 |
申请人 |
STMICROELECTRONICS S.R.L. |
发明人 |
PATTI DAVIDE;APARO SEBASTIANO |
分类号 |
H01L29/73 |
主分类号 |
H01L29/73 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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