发明名称 |
Broad beam ion implantation architecture |
摘要 |
An ion implantation system for providing a mass analyzed ribbon beam that comprises an ion beam source that includes a plasma source and an extraction component, wherein the extraction component is configured to extract a diverging ion beam and direct the ion beam to a window frame magnet assembly. The window frame magnet assembly comprises two pairs of coils orthogonally arranged within a window shaped yoke to produce an independently controllable uniform cross-field magnetic field. The first set of coils create an uniform field across the width of the diverging beam to convert it to a uniform parallel broad ion beam. The second set of coils bend the sheet of the ion beam in orthogonal direction to give mass dispersion for ion mass selection.
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申请公布号 |
US7528390(B2) |
申请公布日期 |
2009.05.05 |
申请号 |
US20060540897 |
申请日期 |
2006.09.29 |
申请人 |
AXCELIS TECHNOLOGIES, INC. |
发明人 |
SATOH SHU |
分类号 |
H01J37/08;H01J37/302;H01J37/317 |
主分类号 |
H01J37/08 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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