发明名称 Broad beam ion implantation architecture
摘要 An ion implantation system for providing a mass analyzed ribbon beam that comprises an ion beam source that includes a plasma source and an extraction component, wherein the extraction component is configured to extract a diverging ion beam and direct the ion beam to a window frame magnet assembly. The window frame magnet assembly comprises two pairs of coils orthogonally arranged within a window shaped yoke to produce an independently controllable uniform cross-field magnetic field. The first set of coils create an uniform field across the width of the diverging beam to convert it to a uniform parallel broad ion beam. The second set of coils bend the sheet of the ion beam in orthogonal direction to give mass dispersion for ion mass selection.
申请公布号 US7528390(B2) 申请公布日期 2009.05.05
申请号 US20060540897 申请日期 2006.09.29
申请人 AXCELIS TECHNOLOGIES, INC. 发明人 SATOH SHU
分类号 H01J37/08;H01J37/302;H01J37/317 主分类号 H01J37/08
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