发明名称 |
Structure and method for MOSFET gate electrode landing pad |
摘要 |
A transistor device and method of forming the same comprises a substrate; a first gate electrode over the substrate; a second gate electrode over the substrate; and a landing pad comprising a pair of flanged ends overlapping the second gate electrode, wherein the structure of the second gate electrode is discontinuous with the structure of the landing pad.
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申请公布号 |
US7528065(B2) |
申请公布日期 |
2009.05.05 |
申请号 |
US20060333068 |
申请日期 |
2006.01.17 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
CLEVENGER LAWRENCE A.;DALTON TIMOTHY J.;HSU LOUIS C.;RADENS CARL;WONG KWONG-HON;YANG CHIH-CHAO |
分类号 |
H01L21/4763 |
主分类号 |
H01L21/4763 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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