| 摘要 |
A fringe field switching type thin film transistor substrate includes a double layered structure gate line; a data line crossing the gate line, wherein a gate insulating film is formed therebetween; a thin film transistor having a gate electrode connected to the gate line, a source electrode connected to the data line, and a drain electrode opposing the source electrode; a double layered structure common line parallel to the gate line; a common electrode plate integrated with the transparent conductive layer of the common line and formed in a pixel area defined by the crossing of the gate line and the data line; a pixel electrode slit covering the drain electrode of the thin film transistor and overlapping the common electrode plate, wherein the gate insulating film is formed therebetween in the pixel area; and a data protection pattern covering the data line and the source electrode.
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