发明名称 Temperature detecting circuit
摘要 A temperature detecting circuit is provided. The temperature detecting circuit includes a reference and detection voltage generator for generating a reference voltage corresponding to a first and a second reference current, and changing first to M-th (M being a natural number) detection currents based on first to M-th temperature detection codes to generate first to M-th detection voltages corresponding to the changed first to M-th detection currents and the second reference current; a temperature detection signal generator for comparing each of the first to M-th detection voltages with the reference voltage to generate first to M-th temperature detection signals; and a temperature detection controller for detecting an operation temperature of a semiconductor device while changing the first to M-th temperature detection codes in response to the first to M-th temperature detection signals from the temperature detection signal generator.
申请公布号 US7528644(B2) 申请公布日期 2009.05.05
申请号 US20060482448 申请日期 2006.07.07
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 CHOI JONG-HYUN;SEO DONG-IL
分类号 H01L35/00 主分类号 H01L35/00
代理机构 代理人
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