发明名称 |
Temperature detecting circuit |
摘要 |
A temperature detecting circuit is provided. The temperature detecting circuit includes a reference and detection voltage generator for generating a reference voltage corresponding to a first and a second reference current, and changing first to M-th (M being a natural number) detection currents based on first to M-th temperature detection codes to generate first to M-th detection voltages corresponding to the changed first to M-th detection currents and the second reference current; a temperature detection signal generator for comparing each of the first to M-th detection voltages with the reference voltage to generate first to M-th temperature detection signals; and a temperature detection controller for detecting an operation temperature of a semiconductor device while changing the first to M-th temperature detection codes in response to the first to M-th temperature detection signals from the temperature detection signal generator.
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申请公布号 |
US7528644(B2) |
申请公布日期 |
2009.05.05 |
申请号 |
US20060482448 |
申请日期 |
2006.07.07 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
CHOI JONG-HYUN;SEO DONG-IL |
分类号 |
H01L35/00 |
主分类号 |
H01L35/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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