发明名称 Methods of forming mirror layers and structures thereof
摘要 A material of a mirror layer is formed within a trench and a via hole. The trench is formed in a dielectric layer over a substrate. The via hole is formed within the trench. The material within the trench is the mirror layer. The material within the via hole is a via plug. The mirror layer is continuous with the via plug.
申请公布号 US7528907(B2) 申请公布日期 2009.05.05
申请号 US20060341399 申请日期 2006.01.26
申请人 TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. 发明人 SUNG YUNG-SHENG
分类号 G02F1/1333;G02F1/1335 主分类号 G02F1/1333
代理机构 代理人
主权项
地址