发明名称 |
Methods of forming mirror layers and structures thereof |
摘要 |
A material of a mirror layer is formed within a trench and a via hole. The trench is formed in a dielectric layer over a substrate. The via hole is formed within the trench. The material within the trench is the mirror layer. The material within the via hole is a via plug. The mirror layer is continuous with the via plug.
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申请公布号 |
US7528907(B2) |
申请公布日期 |
2009.05.05 |
申请号 |
US20060341399 |
申请日期 |
2006.01.26 |
申请人 |
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. |
发明人 |
SUNG YUNG-SHENG |
分类号 |
G02F1/1333;G02F1/1335 |
主分类号 |
G02F1/1333 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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