发明名称 Vertical structure LED and fabricating method thereof
摘要 A vertical structure light emitting diode (LED) and a fabricating method thereof is disclosed, wherein a metal support layer is formed on an upper surface of a light emitting structure by way of electrolytic plating method in which no high temperature process is required to obviate occurrence of defects on the devices, and the metal support layer containing a soft metal and a hard metal is formed on the light emitting structure to prevent occurrence of warping of a wafer to increase the mechanical strength and to improve reliability.
申请公布号 US7528416(B2) 申请公布日期 2009.05.05
申请号 US20060476627 申请日期 2006.06.29
申请人 LG ELECTRONICS INC.;LG INNOTEK CO., LTD. 发明人 KIM SUNJUNG;LEE HYUNJAE;KIM GEUNHO
分类号 H01L27/15;H01L33/12;H01L21/00;H01L33/32;H01L33/40 主分类号 H01L27/15
代理机构 代理人
主权项
地址