发明名称 |
Method for compacting the erased threshold voltage distribution of flash memory devices during writing operations |
摘要 |
A method for operating a flash memory device. The memory device includes a matrix of memory cells each one having a programmable threshold voltage defining a value stored in the memory cell. The method includes the steps of erasing a block of memory cells, and compacting the threshold voltages of the memory cells of the block within a predefined compacting range, wherein the step of compacting includes: selecting at least one first memory cell of the block for writing a target value; restoring the threshold voltage of a subset of the memory cells of the block to the compacting range, the subset including the at least one first memory cell and/or at least one second memory cell of the block being adjacent to the at least one first memory cell; and at least partially writing the target value into the at least one first memory cell.
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申请公布号 |
US7529136(B2) |
申请公布日期 |
2009.05.05 |
申请号 |
US20070844480 |
申请日期 |
2007.08.24 |
申请人 |
MICHELONI RINO;CRIPPA LUCA;RAVASIO ROBERTO;PIO FEDERICO |
发明人 |
MICHELONI RINO;CRIPPA LUCA;RAVASIO ROBERTO;PIO FEDERICO |
分类号 |
G11C16/04 |
主分类号 |
G11C16/04 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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