| 摘要 |
A semiconductor wafer back-surface (3b) grinding method, for grinding a back surface (3b) of a semiconductor wafer (3), an opposed front surface (3a) of the semiconductor wafer (3) being adhered to a support base material (4) and being provided with a circuit pattern (3c), including: measuring an initial thickness (t1) of the semiconductor wafer (3) before grinding, in a condition where the support base material (4) is adhered to the front surface (3a) of the semiconductor wafer (3); obtaining a cutting depth (´2) by subtracting a set final thickness (´3) measured after grinding from the initial thickness (t1); and grinding the back surface (3b) of the semiconductor wafer (3), based on the cutting depth (´2). |
