发明名称 |
PHASE CHANGE MEMORY DEVICE |
摘要 |
<p>A phase change memory device with memory cells (2) formed by a phase change memory element (3) and a selection switch (4) . A reference cell (2a) formed by an own phase change memory element (3a) and an own selection switch (4a) is associated to a group (7) of memory cells to be read. An electrical quantity of the group of memory cells is compared with an analogous electrical quantity of the reference cell, thereby compensating any drift in the properties of the memory cells.</p> |
申请公布号 |
KR20090042925(A) |
申请公布日期 |
2009.05.04 |
申请号 |
KR20097003416 |
申请日期 |
2007.07.26 |
申请人 |
STMICROELECTRONICS S.R.L. |
发明人 |
PELLIZZER FABIO;BEZ ROBERTO;BEDESCHI FERDINANDO;GASTALDI ROBERTO |
分类号 |
G11C13/02;H01L27/115 |
主分类号 |
G11C13/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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