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发明名称
用以避免NMOS元件承受过高电压的保护电路
摘要
本发明提供一种针对NMOS元件的保护电路,其中包含一串联NMOS电晶体和一调整电路。该串联NMOS电晶体系串接于该NMOS元件与一外部电压源之间。该调整电路系耦接至该外部电压源、一第一内部电压源,以及该串联NMOS电晶体之一闸极,并系用以根据该外部电压源和该第一内部电压源之电压,调整该串联NMOS电晶体之该闸极的电压,藉此保护该NMOS元件免于承受因该外部电压源造成之一过高电压。
申请公布号
TW200919892
申请公布日期
2009.05.01
申请号
TW096138799
申请日期
2007.10.17
申请人
晨星半导体股份有限公司
发明人
叶俊文
分类号
H02H9/04(2006.01)
主分类号
H02H9/04(2006.01)
代理机构
代理人
陶霖;谢志敏
主权项
地址
新竹县竹北市台元街26号4楼之1
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