| 摘要 |
PROBLEM TO BE SOLVED: To provide a manufacturing method of a semiconductor device which is not reduced in the nitrogen introducing amount, suppressed in the introduction of damage to an insulating film, and is suppressed in an increase of the nitrogen concentration at the interface between the insulating film and a semiconductor substrate. SOLUTION: (a) The insulating film containing silicon and oxygen is formed on the semiconductor substrate. (b) The insulating film is exposed to an active nitrogen atmosphere, and nitrogen is introduced to the insulating film from its surface side. (c) After the step (b), the resultant is subjected to a heat treatment in an oxygen atom-containing gas. (d) After the step (c), the step (b) and the step (c) are at least once repeated in this order. COPYRIGHT: (C)2009,JPO&INPIT
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