| 摘要 |
PROBLEM TO BE SOLVED: To provide an apparatus for manufacturing a group III nitride semiconductor, which prevents variation in the Na composition of a mixed melt during crystal growth from occurring. SOLUTION: The apparatus for manufacturing the group III nitride semiconductor shown by figure is equipped with: a reaction vessel 10; a crucible 11 which is arranged in the reaction vessel 10 and holds a mixed melt 17 composed of Ga and Na; a lid 12 for the crucible 11; a heating device 13 for heating the reaction vessel 10; a supply tube 14 for supplying nitrogen into the reaction vessel 10; and an exhaust tube 15 for discharging a gas from the inside of the reaction vessel 10 to the outside. The lid 12 has a conical form recessed to the inner side of the crucible 11. Although Na evaporated during crystal growth of GaN liquefies and sticks on the surface 12a on the crucible 11 in the inner side of the lid 12, the stuck Na can be efficiently recovered into the mixed melt 17 by the inclination of the lid 12. Thereby, the variation in the Na composition of the mixed melt 17 can be suppressed. COPYRIGHT: (C)2009,JPO&INPIT
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