发明名称 POSITIVE RESIST COMPOSITION AND PATTERN FORMING METHOD USING THE SAME
摘要 A positive resist composition for electron beam, X-ray or EUV exposure, including (A) a resin capable of decomposing by the action of an acid to increase the solubility in an alkali developer; and (B) a compound capable of generating a sulfonic acid upon irradiation with an actinic ray or radiation, wherein the resin (A) is a resin having a phenolic hydroxyl group and having a weight average molecular weight of 1,500 to 3,500, the positive resist composition has a property of decomposing by the action of an acid and causing the dissolution rate in an aqueous 2.38 wt % tetramethylammonium hydroxide solution at 23° C. under normal pressure to increase in a range of 200 to 5,000 times, and the positive resist composition has a solid content concentration of from 2.5 to 4.5 mass %.
申请公布号 US2009111053(A1) 申请公布日期 2009.04.30
申请号 US20080257646 申请日期 2008.10.24
申请人 FUJIFILM CORPORATION 发明人 YAMASHITA KATSUHIRO
分类号 G03F7/004;G03F7/20 主分类号 G03F7/004
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