发明名称 |
Floating Body Field-Effect Transistors, and Methods of Forming Floating Body Field-Effect Transistors |
摘要 |
In one embodiment, a floating body field-effect transistor includes a pair of source/drain regions having a floating body channel region received therebetween. The source/drain regions and the floating body channel region are received over an insulator. A gate electrode is proximate the floating body channel region. A gate dielectric is received between the gate electrode and the floating body channel region. The floating body channel region has a semiconductor SixGe(1-x)-comprising region. The floating body channel region has a semiconductor silicon-comprising region received between the semiconductor SixGe(1-x)-comprising region and the gate dielectric. The semiconductor SixGe(1-x)-comprising region has greater quantity of Ge than any quantity of Ge within the semiconductor silicon-comprising region. Other embodiments are contemplated, including methods of forming floating body field-effect transistors. |
申请公布号 |
US2009108292(A1) |
申请公布日期 |
2009.04.30 |
申请号 |
US20070925573 |
申请日期 |
2007.10.26 |
申请人 |
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发明人 |
LIU JUN;VIOLETTE MICHAEL P.;MOULI CHANDRA;KIRSCH HOWARD;LI DI |
分类号 |
H01L29/778;H01L21/336;H01L29/786 |
主分类号 |
H01L29/778 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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