发明名称 |
SEMICONDUCTOR DEVICE WITH IMPROVED ESD PROTECTION |
摘要 |
<p>The present invention relates to a semiconductor device, comprising a semiconductor substrate (102) with a thickness of less than 100 micrometer and with a first substrate side and an opposite second substrate side. A plurality of at least four monolithically integrated Zener or avalanche diodes (164,166,168,170) with a reverse breakdown voltage of less than 20 V are defined in the semiconductor substrate and connected with each other in a series connection. The diodes are defined in a plurality of mutually isolated substrate islands (120,122,124,126) in the semiconductor substrate, at least one diode per substrate island. The substrate islands are laterally surrounded by through- substrate isolations extending from the first to the second substrate side and comprising a filling (128) that electrically isolates a respective substrate island from a respective laterally surrounding area of the semiconductor substrate.</p> |
申请公布号 |
WO2009053912(A1) |
申请公布日期 |
2009.04.30 |
申请号 |
WO2008IB54352 |
申请日期 |
2008.10.22 |
申请人 |
NXP B.V.;YANNOU, JEAN-MARC;VAN ZWOL, JOHANNES;SAVIN, EMMANUEL |
发明人 |
YANNOU, JEAN-MARC;VAN ZWOL, JOHANNES;SAVIN, EMMANUEL |
分类号 |
H01L23/60;H01L27/02;H01L27/08 |
主分类号 |
H01L23/60 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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