Wafer surfaces characterization method, involves receiving image from portion of wafer surface, and measuring assigned parameter with respect to layer and surface of layer provided at position of critical region by measuring system

摘要

The method involves receiving an image from a portion of a wafer surface, and searching a defect in the received image. The defect is classified, and a critical region is determined by the defect of the wafer surface. A parameter for a layer e.g. insulating layer, and a parameter for configuration of the surface are assigned to a defect source, where the parameters are layer thickness and optical parameters e.g. refractive index. One of the assigned parameters is measured with respect to the layer and a surface of the layer provided at a position of the critical region by a measuring system.