SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME

摘要

Disclosed is a semiconductor device comprising a silicon carbide substrate (11) having a major surface and a back surface, a semiconductor layer (12) formed on the major surface of the silicon carbide substrate, and a back ohmic electrode layer (1d) formed on the back surface of the silicon carbide substrate. The back ohmic electrode layer (1d) has a reaction layer (1da) containing titanium, silicon and carbon and situated on the back surface side of the silicon carbide substrate, and a titanium nitride layer (1db) situated on the opposite side relative to the back surface of the silicon carbide substrate.