| 摘要 |
A semiconductor device and a method of manufacturing the same are provided to favorably apply stress to activation areas of NMOS and PMOS areas, thereby improving electrical properties of a transistor. A semiconductor device(150) comprises a semiconductor substrate(100), the first element isolation film(102) and the second element isolation film(106). The semiconductor substrate has an NMOS active area and a PMOS active area. The NMOS active area and the PMOS active area are adjacently arranged in the semiconductor substrate. A method of manufacturing a semiconductor device favorably applies different stress to activation areas of NMOS and PMOS areas by the first and second element isolation films.
|
