| 摘要 |
A method for forming a capacitor of a semiconductor device is provided to prevent generation of a leakage current in a gap by exposing an inner wall of a mold insulation film which exposes a storage node contact by a wet etching. An interlayer insulation film(110) including a storage node contact(111) is formed on a substrate(100) on which a bottom structure is formed. A mold insulation film(130) is formed on the interlayer insulation film, and selectively exposes the storage node contact. A conductive material film(150) is charged in an inner part of a gap generated in exposing the storage node contact. A bottom electrode is formed on an inner wall of the mold insulation film of the substrate, and is contacted with the storage node contact. A dielectric film and a top electrode are formed on the bottom electrode.
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