| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor device having small stress caused by a protection section arranged in a through hole and improved connection reliability. <P>SOLUTION: The semiconductor device at least comprises: a semiconductor substrate 12 arranged on one surface of a functional element 11; an electrode 14 that is on one surface of the semiconductor substrate 12 and is arranged while being electrically connected to the functional element 11; a through hole 12a provided from the other surface of the semiconductor substrate 12 to the electrode 14; an insulating layer 13 arranged so that one surface and the other surface of the semiconductor substrate 12 excluding a region where the functional element 11 is arranged, and the through hole 12a are covered; and a conductive section 15 that is arranged at the other surface side of the semiconductor substrate 12 via the insulating layer 13 and is arranged while covering the through hole 12a. The semiconductor device has a gap 16a surrounded by a first protection section 16 arranged in the through hole 12a along the conductive section 15 and a second protection section 17 that is at the other surface side of the semiconductor substrate 12, and is arranged while covering the insulating layer 13, the conductive section 15, and the first protection section 16 at least near the electrode in the through hole 12a. <P>COPYRIGHT: (C)2009,JPO&INPIT |
