STRUCTURE AND METHOD OF PRESERVING STI DURING ETCHING

摘要

PROBLEM TO BE SOLVED: To provide a method of preserving shallow trench isolation (STI) during an oxide-etching process. SOLUTION: The method of protecting the semiconductor shallow trench isolation (STI) oxide from etching includes steps of: lowering, if necessary, the upper surface of the STI oxide to a level below that of adjacent silicon active areas; depositing a nitride liner upon the STI oxide and adjacent silicon active areas in a manner effective in defining a depression above the STI oxide; filling the depression with a protective film; and removing the nitride liner from the adjacent active areas. COPYRIGHT: (C)2009,JPO&INPIT