| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of manufacturing a nonvolatile memory device capable of preventing erroneous write to a non-select cell which shares a word line adjacent to a select line. SOLUTION: By forming a trench 102a on a semiconductor substrate between the select line and the adjacent word line and increasing a distance between the select line and the word line, an electron migration path between the select line and the word line adjacent to the select line is increased and, therefore, the problem of disturbance in which an unintentional program operation is generated in the select line and the adjacent word line is solved. COPYRIGHT: (C)2009,JPO&INPIT
|
