| 摘要 |
PROBLEM TO BE SOLVED: To suppress the generation of a leaking current in siliciding a semiconductor device by an applied distortion technique. SOLUTION: A gate electrode 6 is formed on an element region 20 defined by element isolating regions 3 of a semiconductor substrate 2 via a gate insulating film 5, and extension regions 8 and source/drain regions 9 are formed in the element region 20 present on both sides of the gate electrode 6, and further, each semiconductor layer 10 having a different lattice constant from the one of the semiconductor substrate 2 is formed separately from at least a portion of each element isolating region 3. Thereby, the formation of a spike is so suppressed in the vicinity of each isolating region 3 even in forming each silicide layer 11, thus suppressing the generation of a leaking current caused by such a spike. COPYRIGHT: (C)2009,JPO&INPIT
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