MAGNETORESISTIVE EFFECT ELEMENT AND MAGNETIC RANDOM ACCESS MEMORY

摘要

A magnetoresistive effect element is provided with a first magnetization fixed layer wherein a magnetization direction is fixed; a first magnetization free layer wherein a magnetization direction is variable; a first nonmagnetic layer sandwiched between the first magnetization fixed layer and the first magnetization free layer; a second magnetization fixed layer wherein a magnetization direction is fixed; a second magnetization free layer wherein a magnetization is variable; and a second nonmagnetic layer sandwiched between the second magnetization fixed layer and the second magnetization free layer. The first magnetization fixed layer and the first magnetization free layer have perpendicular magnetic anisotropy. The second magnetization fixed layer and the second magnetization free layer have in-plane magnetic anisotropy. The first magnetization free layer and the second magnetization free layer are magnetically coupled with each other. On a flat surface parallel to each layer, the gravity center of the second magnetization free layer is shifted from the gravity center of the first magnetization free layer.