| 摘要 |
A method for forming a contact of a semiconductor device is provided to effectively secure an open margin of a bit line contact hole by protecting a gate electrode by a protective film. A gate electrode(120) including a hard mask film is formed on a substrate(100). An interlayer insulation film(130) is formed, and covers the gate electrode. A contact hole is formed by selectively etching the interlayer insulation film, and exposes a substrate part between the gate electrodes. An anti-etching film is formed on a front of the substrate on which the contact hole is formed. A protective film(150) surrounds a top of the gate electrode on which the anti-etching film is formed. The substrate part between the gate electrodes is exposed by etching the anti-etching film between the gate electrodes. A connection contact is formed by filling the contact hole with contact material.
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