发明名称 |
DUAL STRESS MEMORY TECHNIQUE METHOD AND RELATED STRUCTURE |
摘要 |
<p>DUAL STRESS MEMORY TECHNIQUE METHOD AND RELATED STRUCTURE A method for providing a dual stress memory technique in a semiconductor device including an nFET and a PFET and a related structure are disclosed. One embodiment of the method includes forming a tensile stress layer over the nFET and a compressive stress layer over the pFET, annealing to memorize stress in the semiconductor device and removing the stress layers. The compressive stress layer may include a high stress silicon nitride deposited using a high density plasma (HDP) deposition method. The annealing step may include using a temperature of approximately 400-1200[err]C. The high stress compressive silicon nitride and/or the anneal temperatures ensure that the compressive stress memorization is retained in the pFET. (Figure 6)</p> |
申请公布号 |
SG151256(A1) |
申请公布日期 |
2009.04.30 |
申请号 |
SG20090016890 |
申请日期 |
2006.09.15 |
申请人 |
CHARTERED SEMICONDUCTOR MANUFACTURING LTD;IBM CORPORATION;SAMSUNG ELECTRONICS CO. LTD |
发明人 |
WAY TEH YOUNG;SUNFEI FANG;ZHIJIONG LUO;NG HUNG Y.;ROVEDO NIVO;JUNG KIM JUN |
分类号 |
|
主分类号 |
|
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|