FERROELECTRIC THIN FILM ELEMENT, AND METHOD OF MANUFACTURING THE SAME

摘要

PROBLEM TO BE SOLVED: To provide a method of manufacturing a ferroelectric thin film for not only making mass production possible and remarkably improving deposition efficiency but also uniformly forming the surface of the ferroelectric thin film, thus greatly decreasing the amount of leakage current and increasing remnant polarization. SOLUTION: The present invention relates to the ferroelectric thin film element having high crystallinity, good surface roughness and remarkably improved deposition efficiency through on-axis type sputtering, and to the method of manufacturing it. The method of manufacturing the ferroelectric thin film device includes: a process of depositing an SrRuO3(SRO) thin film on an SrTiO3(STO) substrate; and a process of depositing a BiFeO3(BFO) thin film on the deposited SRO thin film, wherein each of the thin films is deposited in a state in which the STO substrate is isolated from the ground. The method of manufacturing a ferroelectric thin film device is advantageous in that not only mass production is possible and the deposition efficiency is improved, but also a ferroelectric thin film has a uniform surface, thus greatly decreasing the amount of leakage current and increasing remnant polarization. COPYRIGHT: (C)2009,JPO&INPIT