| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor laser diode which has a simple structure and whose threshold current can be decreased. SOLUTION: The semiconductor laser diode 70 includes a substrate 1 and a group-III nitride semiconductor laminate structure 2 formed on the substrate 1. The group-III nitride semiconductor laminate structure 2 is constituted by laminating an n-type semiconductor layer 11, a light emitting layer 10, and a p-type semiconductor layer 12. The n-type semiconductor layer 11 includes an n-type GaN clad layer 14 and an n-type InGaN guide layer 15, and the p-type semiconductor layer 12 includes a p-type AlGaN electron block layer 16 and a p-type GaN guide contact layer 17. A p-type electrode 4 comprising a transparent electrode is in ohmic contact with a surface of the p-type GaN guide contact layer 17. The p-type electrode 4 is used as an upper clad layer in common. COPYRIGHT: (C)2009,JPO&INPIT
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