| 摘要 |
A silicon-nitrogen compound film according to the first aspect of the present invention is made of a material expressed by a compositional formula Si3NxOyHz, where 10<=(3x+2y)<=12, 3.4<=x<=4.0, 0<=y, 0<=z<=2.0, the peak-area ratio of a first area of a first peak appearing near a wave number of 2150 cm-1 in a Fourier-transform infrared absorption spectrum of the material and corresponding to a Si-H stretching vibration to a second area of a second peak appearing near a wave number of 810 cm-1 in the Fourier-transform infrared absorption spectrum and corresponding to a Si-N stretching vibration is smaller than 0.2, and the silicon-nitrogen compound film has a thickness t (in nanometers) and a density d (g/cm3) which satisfy the inequalities, <?in-line-formulae description="In-line Formulae" end="lead"?>1.9<=d<=2.5, and<?in-line-formulae description="In-line Formulae" end="tail"?> <?in-line-formulae description="In-line Formulae" end="lead"?>-700d+1930<=6t<=-700d+2530.<?in-line-formulae description="In-line Formulae" end="tail"?>
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