发明名称 Method for Improved Power Distribution in a Three Dimensional Vertical Integrated Circuit
摘要 A first through via is electrically insulated from surrounding wafer substrate material. A second through via is not electrically insulated from the surrounding wafer substrate material. This configuration is advantageous when the non-insulated via serves as the path for either Vdd or GND. By not insulating the through via, a first supply voltage (Vdd or GND) is allowed to flow through the surrounding wafer substrate material thereby decreasing the resistance of the first supply voltage path.
申请公布号 US2009111214(A1) 申请公布日期 2009.04.30
申请号 US20070928181 申请日期 2007.10.30
申请人 发明人 CHRISTENSEN TODD ALAN;SHEETS, II JOHN EDWARD
分类号 H01L21/60 主分类号 H01L21/60
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