A semiconductor laser having an optical volume of between about 0.1 x ?3 to about 30 x ?3, where ? is the wavelength of light emitted by the semiconductor laser. The semiconductor laser comprises an optical cavity having a proximal and distal end; a first reflector disposed at the proximal end; a second reflector disposed at the distal end, said optical cavity being defined by the first and second reflectors; an active region disposed transversely with respect to the optical cavity, wherein the semiconductor laser produces an axial emission of light from the distal end of the optical cavity.
申请公布号
WO2007059147(A3)
申请公布日期
2009.04.30
申请号
WO2006US44222
申请日期
2006.11.14
申请人
APPLIED MATERIALS, INC.;WEST, LAWRENCE, C.;WOJCIK, GREGORY, L.