METAL INTERCONNECTION LINE OF SEMICONDUCTOR DEVICE AND METHOD FOR FORMING THEREOF

摘要

A metal wiring of a semiconductor device and a forming method thereof are provided to prevent damage due to a deposition gas in forming a following metal wiring film and to secure a width of a damascene pattern by forming a protective film to a bottom of a barrier metal layer. An etching stop film and a wiring insulation film(101) are successively laminated on a semiconductor substrate(100). A damascene pattern is formed by successively etching the wiring insulation film and the etching stop film. A barrier metal layer(108) is formed on a whole structure including the damascene pattern. A protective film(109) is formed on a bottom part of the barrier metal layer. A metal wiring(110) is formed on the damascene pattern including the protective film.