| 摘要 |
<p>MAGNETORESISTIVE SENSOR MEMORY WITH MULTIFERROIC MATERIAL A memory cell includes a magnetoresistive sensor that comprises layers that include a free layer. The magnetoresistive sensor conducts a read current representative of data stored in the memory cell during a read interval. A first write conductor carries a write current that writes data in the free layer. At least one of the layers comprises a multiferroic layer formed of multiferroic material.</p> |
