| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To prevent the influence of a facet generated at epitaxial growth by enlarging an effective epitaxial growth area. <P>SOLUTION: A semiconductor device 1 is so formed that a first thyristor T1 and a second thyristor T2 formed by bonding a first p-type region p1, a first n-type region n1, a second p-type region p2 and a second n-type region n2 in sequence are isolated by an element isolation region 14. The first n-type regions n1 of the first and second thyristors T1 and T2 are provided while sandwiching the element isolation region 14. Each of the first p-type regions p1 of the first and second thyristors T1 and T2 formed on each of the first n-type regions n1 by selective epitaxial growth is formed in a state where they are continued on the element isolation region 14 between the first n-type regions n1. <P>COPYRIGHT: (C)2009,JPO&INPIT</p> |
