PRODUCTION METHOD FOR SiC SINGLE CRYSTAL, SiC SINGLE CRYSTAL WAFER AND SiC SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a production method for an SiC single crystal suitable as a substrate material for electronic and optical devices, by a solution growth method. SOLUTION: After soaking an SiC seed crystal substrate 4 having a crystal face sloping from a ä0001} face, into an SiC solution 1 prepared by dissolving carbon into a melt of an Si metal or Si-M alloy (M is at least one metal other than Si) as a solvent, the SiC single crystal is grown on the substrate by bringing at least a near place of the substrate into a supersaturation state by supercooling using a temperature gradient method with≤5°C/cm temperature gradient, or an annealing method with a cooling rate of≥0.05°C/min and≤1°C/min. Where the maximum temperature difference in temperature distribution within the face of a growth interface when growing the crystal, is at most 2°C. COPYRIGHT: (C)2009,JPO&INPIT