发明名称 Threshold voltage control circuit and internal voltage generation circuit having the same
摘要 A threshold voltage control circuit includes a first voltage supplying unit for supplying a first power supply voltage, in response to an enable signal which is activated when a bank is enabled, as a back bias voltage of a first MOS transistor, wherein the first MOS transistor drives an internal voltage, and a second voltage supplying unit for supplying a second power supply voltage, in response to the enable signal, as the back bias voltage of the first MOS transistor.
申请公布号 US2009108675(A1) 申请公布日期 2009.04.30
申请号 US20080012938 申请日期 2008.02.05
申请人 HYNIX SEMICONDUCTOR INC. 发明人 PARK SANG IL
分类号 H02J1/00;G05F3/16 主分类号 H02J1/00
代理机构 代理人
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