摘要 |
<p>An apparatus for the production of silicon which is provided with a tubular reactor (10) for conducting the reaction of zinc with a silicon compound, zinc feed pipes (30, 30') which each bear both a heating section for heating zinc to generate zinc gas and a zinc ejection section for feeding zinc gas by ejection into the reactor, zinc introduction sections (40A, 40B) for introducing zinc into the zinc feed pipes, silicon compound feed pipes (50, 50A, 50B, 50C, 50c, 54, 57, 90) provided with silicon compound ejection sections for feeding a silicon compound gas by ejection into the reactor in such a way that the silicon compound gas flows in the reactor from the bottom to the head, and a heating oven (20) set outside the reactor which forms such a heating zone (a) as to cover part of the reactor, the heating sections, and the zinc ejection sections and which heats them in such a way as to give such an inner temperature distribution of the reactor in which zinc gas and the silicon compound gas flow that the temperature on the center axis (C) side is lower than that on the sidewall side.</p> |
申请人 |
KINOTECH SOLAR ENERGY CORPORATION;COVALENT MATERIALS CORPORATION;TAKEUCHI, YOSHINORI;SAKAKI, DAISUKE;OHASHI, TADASHI;MATSUMURA, HISASHI |
发明人 |
TAKEUCHI, YOSHINORI;SAKAKI, DAISUKE;OHASHI, TADASHI;MATSUMURA, HISASHI |